050-7028 rev d 9-2004 maximum ratings all ratings: t c = 25c unless otherwise specified. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com t-max ? g d s to-264 b2fll lfll apt5010b2fll apt5010lfll 500v 46a 0.100 ?? ?? ? lower input capacitance increased power dissipation lower miller capacitance easier to drive lower gate charge, qg popular t-max? or to-264 package fast recovery body diode power mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switchinglosses are addressed with power mos 7 ? by significantly lowering r ds(on) and q g . power mos 7 ? combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with apt'spatented metal gate structure. power mos 7 r fredfet characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, i d = 23a) zero gate voltage drain current (v ds = 500v, v gs = 0v) zero gate voltage drain current (v ds = 400v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 2.5ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms ana volts min typ max 500 0.100 250 1000 100 35 apt5010b2fll_lfll 500 46 184 3040 520 4.0 -55 to 150 300 5050 1600 downloaded from: http:///
050-7028 rev d 9-2004 dynamic characteristics apt5010b2fll_lfll note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.300.25 0.20 0.15 0.10 0.05 0 0.5 0.1 0.3 0.7 0.9 0.05 source-drain diode ratings and characteristics thermal characteristics characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -46a) peak diode recovery dv / dt 5 reverse recovery time(i s = -46a, di / dt = 100a/s) reverse recovery charge(i s = -46a, di / dt = 100a/s) peak recovery current(i s = -46a, di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps min typ max 46 184 1.3 15 t j = 25c 280 t j = 125c 600 t j = 25c 2.28 t j = 125c 6.41 t j = 25c 15.7 t j = 125c 23.6 symbol r jc r ja min typ max 0.25 40 unitc/w characteristicjunction to case junction to ambient symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energyturn-on switching energy 6 turn-off switching energy test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 250v i d = 46a @ 25c resistive switching v gs = 15v v dd = 250v i d = 46a@ 25c r g = 0.6 ? inductive switching @ 25c v dd = 333v, v gs = 15v i d = 46a, r g = 5 ? inductive switching @ 125c v dd = 333v v gs = 15v i d = 46a, r g = 5 ? min typ max 4360 895 6095 24 50 11 15 25 3 545510 845 595 unit pf nc ns j 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 1.51mh, r g = 25 ? , peak i l = 46a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - i d 46a di / dt 700a/s v r 500v t j 150 c 6 eon includes diode reverse recovery. see figures 18, 20. apt reserves the right to change, without notice, the specifications and inforation contained herein. downloaded from: http:///
050-7028 rev d 9-2004 typical performance curves apt5010b2fll_lfll 0 5 10 15 20 25 30 012 345678910 0 20 40 60 80 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 100 9080 70 60 50 40 30 20 10 0 5040 30 20 10 0 2.52.0 1.5 1.0 0.5 0.0 120100 8060 40 20 0 1.2 1.15 1.1 1.05 1.0 0.95 0.9 1.151.10 1.05 1.00 0.95 0.90 0.85 1.21.1 1.0 0.9 0.8 0.7 0.6 i d = 23a v gs = 10v t j = +125c t j = +25c t j = -55c v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle v gs =10v v gs =20v normalized to v gs = 10v @ 23a 15 &10v 8v 6v 5.5v 6.5v 7v 7.5v r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature 0.01310.0789 0.0811 0.00266f0.00584f 0.0796f power (watts) junctiontemp. ( c) rc model case temperature. ( c) 0.230 0.460f downloaded from: http:///
050-7028 rev d 9-2004 apt5010b2fll_lfll 184100 10 1 1612 84 0 1 10 100 500 0 10 20 30 40 50 0 20 40 60 80 100 120 140 0.3 0.5 0.7 0.9 1.1 1.3 1.5 t c =+25c t j =+150c single pulse operation here limited by r ds (on) c rss c iss c oss v ds =250v v ds =100v v ds =400v i d = 46a 10ms 1ms 100s t j =+150c t j =+25c v dd = 330v r g = 5 ? t j = 125c l = 100h i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance t d(on) t d(off) e on e off e on e off t r t f e on and e off ( j) t d(on) and t d(off) (ns) switching energy ( j) t r and t f (ns) v dd = 330v r g = 5 ? t j = 125c l = 100h 10 20 30 40 50 60 70 10 20 30 40 50 60 70 10 20 30 40 50 60 70 0 5 10 15 20 25 30 35 40 45 50 8070 60 50 40 30 20 10 0 15001200 900600 300 0 v dd = 330v r g = 5 ? t j = 125c l = 100h e on includes diode reverse recovery. v dd = 330v i d = 46a t j = 125c l = 100h e on includes diode reverse recovery. 100 9080 70 60 50 40 30 20 10 0 25002000 1500 1000 500 0 v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 20,00010,000 1,000 100 10 200100 10 1 downloaded from: http:///
figure 18, turn-on switching waveforms and definitions figure 19, turn-off switching waveforms and definitions gate voltage drain voltage drain current 90% 90% t f t d(off) 10% switching energy t j = 125 c 10 % t d(on) 10 % t r 90% switching energy drain voltage drain current gate voltage t j = 125 c 5 % 5 % 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 5.45 (.215) bsc 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) drain source gate these dimensions are equal to the to-247 without the mounting hole. drain 2-plcs. 19.51 (.768)20.50 (.807) 19.81 (.780)21.39 (.842) 25.48 (1.003)26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030)1.30 (.051) 3.10 (.122) 3.48 (.137) 4.60 (.181)5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019)0.84 (.033) drain source gate dimensions in millimeters and (inches) drain 2.29 (.090)2.69 (.106) 5.79 (.228)6.20 (.244) 2.79 (.110)3.18 (.125) 5.45 (.215) bsc 2-plcs. dimensions in millimeters and (inches) t-max tm (b2) package outline to-264 (l) package outline apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. i d d.u.t. v ds figure 20, inductive switching test circuit v dd g apt30df60 050-7028 rev d 9-2004 apt5010b2fll_lfll downloaded from: http:///
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